TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 1 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? applications sot-89 package ? repeaters ? mobile infrastructure ? lte / wcdma / cdma / edge ? general purpose wireless product features functional block diagram ? 100-4000 mhz ? 13 db gain @ 1.9 ghz ? 1.3 db noise figure @ 1.9 ghz ? +41 dbm output ip3 ? +23.6 dbm p1db ? 50 ohm cascadable gain block ? unconditionally stable ? high input power capability ? +5v single supply, 125 ma current ? sot-89 package rf in gnd rf out gnd 1 2 3 4 general description pin configuration the TQP3M9007 is a high linearity low noise gain block amplifier in a low-cost su rface-mount package. at 1.9 ghz, the amplifier typically provides 13 db gain, +41 dbm oip3, and 1.3 db noise figure while drawing 125 ma current. the device is housed in a leadfree/green/rohs-compliant industry-standard sot- 89 package. the TQP3M9007 has the benefit of having high linearity while also providing very low noise across a broad range of frequencies. this allows the device to be used in both receive and transmit chai ns for high performance systems. the amplifier is internally matched using a high performance e-phemt process and only requires an external rf choke and bloc king/bypass capacitors for operation from a single +5v supply. the internal active bias circuit also enables stable operation over bias and temperature variations. the TQP3M9007 covers the 0.1 - 4 ghz frequency band and is targeted for wireless infrastructure or other applications requiring high linearity and/or low noise figure. pin # symbol 1 rf in 3 rf out 2, 4 gnd ordering information part no. description TQP3M9007 high linearity lna gain block TQP3M9007-pcb 0.5-4 ghz evaluation board standard t/r size =1000 pieces on a 7? reel. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 2 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? specifications absolute maximum ratings parameter rating storage temperature -55 to 150 o c rf input power,cw,50 ? ,t=25oc +20 dbm device voltage,v dd +7 v operation of this device outsi de the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max units v dd 3 5 5.25 v tcase -40 +85 o c tj (for>10 6 hours mttf ) 190 o c electrical specifi cations are measured at sp ecified test conditions. specifications are not guarantee d over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: +25oc, +5v supply, 50 ? system. parameter conditions min typical max units operational frequency range 100 4000 mhz test frequency 1900 mhz gain 11.5 13 14.5 db input return loss 18 db output return loss 13 db output p1db +23.6 dbm output ip3 see note 1. +37 +41 dbm noise figure 1.3 db supply voltage, v dd +5 v current, i dd 125 150 ma thermal resistance (jnc to case) jc 52 o c/w n otes: 1. oip3 is measured with two tones at an output power of 4 dbm / tone separated by 1 mhz. th e suppression on the largest im3 prod uct is used to calculate the oip3 using 2:1 rule. 2:1 rule gives relative value with re spect to fundamental tone. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 3 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? device characterization data 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gain (db) frequency (ghz) gain and max stable gain gain (db) de-embedded s-parameter vcc = 5v 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0. 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 6ghz swp min 0.01ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 6ghz swp min 0.01ghz s-parameter data v dd = +5 v, i cq = 125 ma, t = +25 c, unmatched 50 ohm system, calibrated to device leads freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -9.21 -171.69 21.92 165.87 -28.66 7.52 -10.26 -177.68 100 -9.18 178.66 21.72 164.31 -28.54 8.08 -10.62 166.81 200 -9.58 168.58 21.39 154.89 -28.25 11.48 -10.93 145.14 400 -11.09 155.91 20.71 134.86 -27.05 16.59 -11.61 112.74 800 -13.55 148.37 18.58 99.19 -24.58 17.74 -12.39 63.78 1000 -14.69 147.37 17.47 84.06 -23.58 14.87 -13.43 40.99 1200 -15.31 148.14 16.33 70.48 -22.59 12.31 -13.72 23.70 1500 -16.32 152.38 14.85 52.18 -21.45 6.08 -14.84 -3.77 1900 -16.36 155.45 13.11 30.26 -19.96 -2.85 -15.21 -32.08 2000 -16.44 154.43 12.73 25.52 -19.77 -5.72 -15.43 -42.20 2200 -16.55 154.33 11.98 15.20 - 19.13 -12.30 -16.18 -54.41 2500 -16.78 153.75 10.97 0.51 - 18.24 -20.16 -16.76 -84.02 2600 -16.83 154.69 10.59 -4.70 -18.14 -23.60 -16.24 -91.43 3000 -17.62 157.51 9.53 -24.26 -17.17 -36.43 -16.21 -128.42 3500 -18.79 154.34 8.24 -48.07 -16.19 -53.90 -14.74 -165.72 4000 -20.11 176.37 7.01 -72.56 -15.53 -72.99 -11.54 154.74 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 4 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? application circuit configuration q1 c6 c2 c1 c3 j3 gnd bill of material: TQP3M9007-pcb reference desg. value description manufacturer part number q1 high linearity lna gain block triquint TQP3M9007 c2 100 pf cap, chip, 0603, 50v, npo, 5% various c6 27 pf cap, chip, 0603, 50v, npo, 5% various c1 0.1 uf cap, chip, 0603, 16v, x7r, 10% various l2 56 nh ind, chip, 0603, 5% various c3 4.7 uf cap, chip, 0603, 6.3v, x5r, 20% various b1 0 ? res, chip, 0603, 1/16w, 5% various d1 do not place various n otes: 1. see pc board layout, under application info rmation section, for more information. 2. components shown on the silkscreen but not on the schematic are not used. 3. b1 (0 ? jumper) may be replaced with copper trace in the target application layout. 4. all components are of 0603 size unl ess stated on the schematic. 5. c6 and l2 value are critical for linearity performance. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 5 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? typical performance TQP3M9007-pcb test conditions unless otherwise noted: +25oc, +5v, 125 ma, 50 ? system. the data shown belo w is measured on TQP3M9007-pcb notes: 1. oip3 measured with two tones at an output power of +4 dbm / t one separated by 1 mhz. the suppr ession on the largest im3 product is used to calculate the oip3 using 2:1 rule. 2. noise figure data shown in the table above is measured on evaluation board and corrected for the board loss of about 0.13 db @ 1.9 ghz. performance plots performance plots data is measured using TQP3M9007-pcb. noise figure plot has been corrected for evaluation board loss of 0.13 db @ 1.9 ghz. 6 8 10 12 14 16 18 20 22 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gain (db) frequency (ghz) gain vs. frequency +85 c +25 c ? 40 c vcc = 5v -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 input return loss (db) frequency (ghz) input return loss vs. frequency +85 c +25 c ? 40 c vcc = 5v -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output return loss (db) frequency (ghz) output return loss vs. frequency +85 c +25 c ? 40 c vcc = 5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 nf (db) frequency (ghz) noise figure vs. frequency vcc = 5 v +85 c +25 c ? 40 c 30 35 40 45 50 024681012 oip3 (dbm) output power (dbm) oip3 vs. output power/tone freq. = 900 mhz 1mhz tone spacing vcc = 5v +85 c +25 c ? 30 c ? 40 c 30 35 40 45 50 024681012 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone freq. = 1900 mhz 1 mhz tone spacing vcc = 5v +85 c +25 c ? 30 c ? 40 c frequency mhz 500 900 1900 2100 2600 gain db 20 18 13 12 10 input return loss db 11.5 14 18 17.5 15.5 output return loss db 10.5 13 13 12 10.5 output p1db dbm +22.9 +23.3 +23.5 +23.8 +24.0 oip3 [1] dbm +39.3 +40.2 +41.1 +42.2 +42.2 noise figure [2] db 1.4 1.2 1.3 1.4 1.8 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 6 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? 30 35 40 45 50 0.5 1.0 1.5 2.0 2.5 oip3 (dbm) frequency (ghz) oip3 vs. frequency 1 mhz tone spacing temp. = 25 o c vcc = 5v 22 23 24 25 -40-20 0 20406080 p1db (dbm) temperature (c) p1db vs. temperature 1900 mhz 900 mhz vcc = 5v -60 -55 -50 -45 -40 -35 -30 10 12 14 16 18 20 aclr1 (dbc) output power (dbm) aclr vs. output power 900 mhz 1900 mhz single carrier 1+64dpch wcdma, par 10.2db @ 0.01% probability vcc = 5v 5 10 15 20 25 30 0 5 10 15 20 output power (dbm) input power (dbm) power compression curve 900 mhz 1900 mhz 25 30 35 40 45 34567 oip3 (dbm) vdd (volts) oip3 vs. vdd 1900mhz 900mhz pout/tone = 4dbm tone spacing = 1mhz 10 15 20 25 30 34567 p1db (dbm) vdd (volts) p1db vs. vdd 1900 mhz 900 mhz 95 100 105 110 115 120 125 130 3.0 4.0 5.0 6.0 7.0 idd (ma) vdd (volts) idd vs vdd www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 7 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? pin description rf in gnd rf out gnd 1 23 4 pin symbol description 1 rf input input, matched to 50 ohms. external dc block is required. 3 v dd / rfout output, matched to 50 ohms, external dc block is required and supply voltage. 2, 4 gnd paddle backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see page 7 for mounting configuration. applications information pc board layout top rf layer is .014? nelco n4000-13, ? r = 3.9, 4 total layers (0.062? thick) for mechanical rigidity. metal layers are 1-oz copper. 50 ohm microstrip line details: width = .029?, spacing = .035? the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommended. for further technical information, refer to www.triquint.com www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 8 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? mechanical information package information and dimensions markings: part number: 3m9007 assembly code: ?y? is last digit of part manufacture year. ?xxx? is lot code. pcb mounting pattern all dimensions are in millimeters (inches). angles are in degrees. notes: 1. ground / thermal vias are critical for th e proper performance of this device. vi as should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. rf trace width depends upon the pc board material and construction. 4. use 1 oz. copper minimum. 3m9007 yxxx www.datasheet.net/ datasheet pdf - http://www..co.kr/
TQP3M9007 ?w high linearity lna gain block data sheet: rev d 12/27/11 - 9 of 9 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connec ting the digital world to the global network ? product compliance information esd information esd rating: class 1a value: passes 250 v to < 500 v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000 v test: charged device model (cdm) standard: jedec standard jesd22-c101 solderability compatible with both lead-free (maximum 260c reflow temperature) and lead (maximum 245c reflow temperature) soldering processes. this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating moisture sensitivity level 3 at 260c per jedec standard ipc/jedec j-std-020. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.503.615.9000 email: info-sales@tqs.com fax: +1.503.615.8902 for technical questions and application information: email: sjcapplications.engineering@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be exp ected to cause severe pers onal injury or death. www.datasheet.net/ datasheet pdf - http://www..co.kr/
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